Smorchkova, Y. V.: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting

Y.C Chou, D Leung, I Smorchkova, M Wojtowicz, R Grundbacher, L Callejo, Q Kan, R Lai, P.H Liu, D Eng, A Oki

Journal:

Microelectronics Reliability

Year:

2004

Language:

english

File:

PDF, 429 KB

english, 2004

2

AlGaN/AlN/GaN high-power microwave HEMT

Shen, L., Heikman, S., Moran, B., Coffie, R., Zhang, N.-Q., Buttari, D., Smorchkova, I.P., Keller, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 62 KB

english, 2001

3

Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Smorchkova, I. P., Elsass, C. R., Ibbetson, J. P., Vetury, R., Heying, B., Fini, P., Haus, E., DenBaars, S. P., Speck, J. S., Mishra, U. K.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 336 KB

english, 1999

4

Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures

A. Link, T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, J. Speck

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 93 KB

english, 2001

5

[IEEE 2007 IEEE/MTT-S International Microwave Symposium - Honolulu, HI, USA (2007.06.3-2007.06.8)] 2007 IEEE/MTT-S International Microwave Symposium - A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz

Kobayashi, Kevin W., Chen, YaoChung, Smorchkova, Ioulia, Tsai, Roger, Wojtowicz, Mike, Oki, Aaron

Year:

2007

Language:

english

File:

PDF, 1.65 MB

english, 2007

6

[IEEE 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) - Forth Worth, TX, USA (June 6-11, 2004)] 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) - Wideband AlGaN/GaN HEMT low noise.amplifier for highly survivable receiver electronics

Cha, S., Chung, Y.H., Wojtowwiez, M., Smorchkova, I., Allen, B.R., Yang, J.M., Kagiwada, R.

Year:

2004

Language:

english

File:

PDF, 180 KB

english, 2004

7

[IEEE 2009 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) - Boston, MA, USA (2009.06.7-2009.06.9)] 2009 IEEE Radio Frequency Integrated Circuits Symposium - Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance

Kobayashi, Kevin W., YaoChung Chen,, Smorchkova, Ioulia, Heying, Benjamin, Wen-Ben Luo,, Sutton, William, Wojtowicz, Mike, Oki, Aaron

Year:

2009

Language:

english

File:

PDF, 419 KB

english, 2009

8

Polarization-enhanced Mg doping of AlGaN/GaN superlattices

Kozodoy, Peter, Smorchkova, Yulia P., Hansen, Monica, Xing, Huili, DenBaars, Steven P., Mishra, Umesh K., Saxler, A. W., Perrin, R., Mitchel, W. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 277 KB

english, 1999

9

Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)

Poblenz, C., Waltereit, P., Rajan, S., Mishra, U. K., Speck, J. S., Chin, P., Smorchkova, I., Heying, B.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2005

Language:

english

File:

PDF, 326 KB

english, 2005

10

[IEEE 2009 IEEE MTT-S International Microwave Symposium Digest (MTT) - Boston, MA, USA (2009.06.7-2009.06.12)] 2009 IEEE MTT-S International Microwave Symposium Digest - Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers

Shih, S.E., Deal, W.R., Yamauchi, D., Sutton, W.E., Chen, Y.C., Smorchkova, I., Heying, B., Wojtowicz, M., Siddiqui, M.

Year:

2009

Language:

english

File:

PDF, 402 KB

english, 2009

11

[IEEE 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Phoenix, AZ, USA (2007.04.15-2007.04.19)] 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual - Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs

Coffie, R., Chen, Y., Smorchkova, I. P., Heying, B., Gambin, V., Sutton, W., Chou, Y.-C., Luo, W.-B., Wojtowicz, M., Oki, A.

Year:

2007

Language:

english

File:

PDF, 462 KB

english, 2007

12

Polarization effects and transport in AlGaN/GaN system

Zhang, Yifei, Smorchkova, Yulia, Elsass, C., Keller, Stacia, Ibbetson, James, DenBaars, Steven, Mishra, Umesh, Singh, Jasprit

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2000

Language:

english

File:

PDF, 484 KB

english, 2000

13

(Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

Gutierrez-Aitken, A., Scott, D., Sato, K., Poust, B., Nakamura, E., Thai, K., Chan, W., Kaneshiro, E., Monier, C., Smorchkova, I., Lin, N., Ferizovic, D., Zeng, X., Oki, A., Kagiwada, R.

Journal:

ECS Transactions

Year:

2016

Language:

english

File:

PDF, 1.25 MB

english, 2016

14

Electron Transport in III–V Nitride Two-Dimensional Electron Gases

D. Jena, I. Smorchkova, A.C. Gossard, U.K. Mishra

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 79 KB

english, 2001

15

Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG

R. Goldhahn, C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, U.K. Mishra, J.S. Speck

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 150 KB

english, 2002

16

Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands

A. Link, T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, M. Stutzmann

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 178 KB

english, 2002

17

The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy

E Haus, I.P Smorchkova, B Heying, P Fini, C Poblenz, T Mates, U.K Mishra, J.S Speck

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 1.72 MB

english, 2002

18

Spin transport and optically-probed coherence in magnetic semiconductor heterostructures

I.P. Smorchkova, F.S. Flack, N. Samarth, J.M. Kikkawa, S.A. Crooker, D.D. Awschalom

Journal:

Physica B: Condensed Matter

Year:

1998

Language:

english

File:

PDF, 180 KB

english, 1998

19

Spin-dependent transport in a magnetic two-dimensional electron gas

I.P Smorchkova, J.M Kikkawa, N Samarth, D.D Awschalom

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

1998

Language:

english

File:

PDF, 143 KB

english, 1998

20

Optical studies of spin precession in magnetic two-dimensional electron gases

J.M Kikkawa, I.P Smorchkova, N Samarth, D.D Awschalom

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

1998

Language:

english

File:

PDF, 96 KB

english, 1998

21

Photoreflectance studiesof N- and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG

A. T. Winzer, R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, U. K. Mishra, J. S. Speck

Journal:

physica status solidi (b)

Year:

2003

Language:

english

File:

PDF, 104 KB

english, 2003

22

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

O. Ambacher, M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, W. Schaff, V. Tilak, L. F. Eastman

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 2.02 MB

english, 2003

23

Numerical solution of the hypersingular integral equation for the inner Neumann problem

E. V. Zakharov, L. A. Smorchkova

Journal:

Computational Mathematics and Modeling

Year:

1994

Language:

english

File:

PDF, 191 KB

english, 1994

24

Ultrashort hole capture time in Mg-doped GaN thin films

Lin, Kung-Hsuan, Chern, Gia-Wei, Chu, Shi-Wei, Sun, Chi-Kuang, Xing, Huili, Smorchkova, Yulia, Keller, Stacia, Mishra, Umesh, DenBaars, Steven P.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 285 KB

english, 2002

25

GaN HBT: toward an RF device

McCarthy, L.S., Smorchkova, I.P., Huili Xing, Kozodoy, P., Fini, P., Limb, J., Pulfrey, D.L., Speck, J.S., Rodwell, M.J.W., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 219 KB

english, 2001

26

A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

Mingqi Chen, Sutton, W., Smorchkova, I., Heying, B., Wen-Ben Luo, Gambin, V., Oshita, F., Tsai, R., Wojtowicz, M., Kagiwada, R., Oki, A., Jenshan Lin

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2010

Language:

english

File:

PDF, 481 KB

english, 2010

27

[IEEE IEEE Lester Eastmann Biennial Conference - Newark, DE, USA (6-8 Aug. 2002)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices - AlGaN/GaN HEMT high-power and low-noise performance at f≥20 GHz

Smorchkova, I.P., Wojtowicz, M., Tsai, R., Sandhu, R., Barsky, M., Namba, C., Liu, P.H., Dia, R., Truong, M., Ko, D., Wang, J., Wang, H., Khan, A.

Year:

2002

Language:

english

File:

PDF, 271 KB

english, 2002

28

A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO

Lan, X., Wojtowicz, M., Smorchkova, I., Coffie, R., Tsai, R., Heying, B., Truong, M., Fong, F., Kintis, M., Namba, C., Oki, A., Wong, T.

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2006

Language:

english

File:

PDF, 517 KB

english, 2006

29

A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

Kobayashi, K.W., Yao-Chung Chen, Smorchkova, I., Heying, B., Luo, W.-B., Sutton, W., Wojtowicz, M., Oki, A.

Journal:

IEEE Journal of Solid-State Circuits

Year:

2009

Language:

english

File:

PDF, 1.38 MB

english, 2009

30

In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy

Heying, B., Smorchkova, I.P., Coffie, R., Gambin, V., Chen, Y.C., Sutton, W., Lam, T., Kahr, M.S., Sikorski, K.S., Wojtowicz, M.

Journal:

Electronics Letters

Year:

2007

Language:

english

File:

PDF, 60 KB

english, 2007

31

Transient characteristics of gan-based heterostructure field-effect transistors

Kohn, E., Daumiller, I., Kunze, M., Neuburger, M., Seyboth, M., Jenkins, T.J., Sewell, J.S., Van Norstand, J., Smorchkova, Y., Mishra, U.K.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2003

Language:

english

File:

PDF, 688 KB

english, 2003

32

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Diamond Materials for GaN HEMT near Junction Heat Removal

Sandhu, Rajinder, Gambin, Vincent, Poust, Benjamin, Smorchkova, Ioulia, Lewis, Gregg, Elmadjian, Raffi, Li, Danny, Geiger, Craig, Heying, Ben, Wojtowicz, Mike, Oki, Aaron, Feygelson, Tatyana, Hobart,

Year:

2012

Language:

english

File:

PDF, 157 KB

english, 2012

33

Fermi edge singularity observed in GaN/AlGaN heterointerfaces

Akopian, N., Vardi, A., Bahir, G., Garber, V., Ehrenfreund, E., Gershoni, D., Poblenz, C., Elsass, C. R., Smorchkova, I. P., Speck, J. S.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 442 KB

english, 2009

34

[IEEE 2007 IEEE Compound Semiconductor Integrated Circuits Symposium - Portland, OR, USA (2007.10.14-2007.10.17)] 2007 IEEE Compound Semiconductor Integrated Circuits Symposium - Broadband GaN Dual-Gate HEMT Low Noise Amplifier

Shih, S. E., Deal, W. R., Sutton, W. E., Chen, Y. C., Smorchkova, I., Heying, B., Wojtowicz, M., Siddiqui, M.

Year:

2007

Language:

english

File:

PDF, 314 KB

english, 2007

35

[IEEE 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010 - Anaheim, CA, USA (2010.05.23-2010.05.28)] 2010 IEEE MTT-S International Microwave Symposium - Reliable GaN HEMTS for high frequency applications

Heying, Ben, Luo, Wen-Ben, Smorchkova, Ioulia, Din, Salah, Wojtowicz, Mike

Year:

2010

Language:

english

File:

PDF, 1.08 MB

english, 2010

36

AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

Smorchkova, I. P., Chen, L., Mates, T., Shen, L., Heikman, S., Moran, B., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K.

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 453 KB

english, 2001

37

Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers

Shih-En Shih,, Deal, W.R., Yamauchi, D.M., Sutton, W.E., Wen-Ben Luo,, Yaochung Chen,, Smorchkova, I.P., Heying, B., Wojtowicz, M., Siddiqui, M.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2009

Language:

english

File:

PDF, 1.59 MB

english, 2009

38

Gallium nitride based transistors

Xing, H, Keller, S, Wu, Y-F, McCarthy, L, Smorchkova, I P, Buttari, D, Coffie, R, Green, D S, Parish, G, Heikman, S, Shen, L, Zhang, N, Xu, J J, Keller, B P, DenBaars, S P, Mishra, U K

Journal:

Journal of Physics Condensed Matter

Year:

2001

Language:

english

File:

PDF, 472 KB

english, 2001

39

Study of deleterious aging effects in GaN/AlGaN heterostructures

Elhamri, S., Saxler, A., Mitchel, W. C., Berney, R., Elsass, C., Smorchkova, Y., Mishra, U. K., Speck, J. S., Chowdhury, U., Dupuis, R. D.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 218 KB

english, 2003

40

GaN Technology for Millimeter Wave Power Amplifiers

Oki, A. K., Wojtowicz, M., Heying, B., Smorchkova, I., Luo, B., Siddiqui, M.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 239 KB

english, 2013

41

Generation of coherent acoustic phonons in strained GaN thin films

Huang, Yue-Kai, Chern, Gia-Wei, Sun, Chi-Kuang, Smorchkova, Yulia, Keller, Stacia, Mishra, Umesh, DenBaars, Steven P.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 291 KB

english, 2001

42

[IEEE 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Monterey, CA, USA (2013.10.13-2013.10.16)] 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Selective Growth of Diamond in Thermal Vias for GaN HEMTs

Poust, Benjamin, Gambin, Vincent, Sandhu, Rajinder, Smorchkova, Ioulia, Lewis, Gregory, Elmadjian, Raffi, Li, Danny, Geiger, Craig, Heying, Benjamin, Wojtowicz, Mike, Oki, Aaron, Pate, Bradford B., Fe

Year:

2013

Language:

english

File:

PDF, 674 KB

english, 2013

43

High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Elsass, C. R., Smorchkova, I. P., Heying, B., Haus, E., Fini, P., Maranowski, K., Ibbetson, J. P., Keller, S., Petroff, P. M., DenBaars, S. P., Mishra, U. K., Speck, J. S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 304 KB

english, 1999

44

[IEEE Device Research Conference - Santa Barbara, CA, USA (24-26 June 2002)] 60th DRC. Conference Digest Device Research Conference - 3.2 W/mm, 71% PAE AlGaN/GaN HEMT operation at 20 GHz

Sandhu, R., Wojtowicz, M., Smorchkova, I., Barsky, M., Tsai, R., Yang, J.W., Wang, H., Khan, M.A.

Year:

2002

Language:

english

File:

PDF, 60 KB

english, 2002

45

AlGaN/GaN HEMTs---operation in the K-band and above

Smorchkova, I.P., Wojtowicz, M., Sandhu, R., Tsai, R., Barsky, M., Namba, C., Liu, P.-S., Dia, R., MinhDao Truong,, Ko, D., Wang, J., Wang, H., Khan, A.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2003

Language:

english

File:

PDF, 227 KB

english, 2003

46

Daumiller, I., Theron, D., Gaquiere, C., Vescan, A., Dietrich, R., Wieszt, A., Leier, H., Vetury, R., Mishra, U.K., Smorchkova, I.P.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 65 KB

english, 2001

47

[IEEE 58th DRC. Device Research Conference - Denver, CO, USA (19-21 June 2000)] 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) - AlGaN-GaN HEMTs and HBTs for microwave power

Mishra, U.K., Ventury, R., McCarthy, L., Smorchkova, Y., Keller, S., Xing, H., Zhang, N., Speck, J.S., York, R., DenBaars, S., Wu, Y.-F., Parikh, P., Chavarkar, P.

Year:

2000

Language:

english

File:

PDF, 135 KB

english, 2000

48

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

Smorchkova, I. P., Keller, S., Heikman, S., Elsass, C. R., Heying, B., Fini, P., Speck, J. S., Mishra, U. K.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 394 KB

english, 2000

49

[IEEE 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (30 Sept.-2 Oct. 2001)] Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) - Progress in gallium nitride-based bipolar transistors

Xing, H., Green, D.S., McCarthy, L., Smorchkova, I.P., Chavarkar, P., Mates, T., Keller, S., DenBaars, S., Speck, J., Mishra, U.K.

Year:

2001

Language:

english

File:

PDF, 666 KB

english, 2001

50

[IEEE 58th DRC. Device Research Conference - Denver, CO, USA (19-21 June 2000)] 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) - HBT on LEO GaN

McCarthy, L., Smorchkova, Y., Fini, P., Xing, H., Rodwell, M., Speck, J., DenBaars, S., Mishra, U.

Year:

2000

Language:

english

File:

PDF, 249 KB

english, 2000

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски